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Dr.Yang QIU

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Dr.Yang QIU

  • Office: Rm.208, Material Characterization and Preparation Center
  • Email: qiuy@sustech.edu.cn
  • Mail Address: Material Characterization and Preparation Center, Southern University of Science and Technology, 518055 Shenzhen, China

Education: 

09/2005 – 10/2011 Ph.D. in Electronic & Electrical Engineering

University of Sheffield, United Kingdom

Thesis: Study of InAs and InP semiconductor quantum dot nanostructures by transmission electron microscopy, supervised by Dr T Walther and Prof Tony Cullis

09/2002 – 06/2005 BEng Electronic Engineering (First Class Honours)

University of Sheffield, United Kingdom


Professional appointment:

12/2015 –Present South University of Science and Technology of China, China

Electron Microscope (EM) Engineer 

10/2013 –11/2015 IMEC, Belgium

Post-Doctoral Fellow 

01/2012 – 07/2013 LAAS-CNRS, France

Post Doctoral 

10/2011 – 01/2012 Dept. Electronic and Electrical Eng., University of Sheffield, UK

Research Associate

09/2005 – 10/2011 Dept. Electronic and Electrical Eng., University of Sheffield, UK

Demonstrator


Research Area:

I am interested in using various electron microscopy techniques to modify and investigate semiconductor materials. I have a very good theoretical and operational knowledge of scanning electron microscopy (SEM), focused ion beam (FIB) and transmission electron microscopy (TEM) techniques. I have in depth experience of using SEM equipped with energy-dispersive X-ray spectrometry (EDX), Electron Backscattered Diffraction (EBSD) and WDS. In addition, I have some experience of using focused ion beam, including both Gallium ion beam and Helium ion beam, to modify and analysis materials.  

Finally, I have the knowledge of various EM specimen preparation techniques to prepare semiconductors, metals, and powders. 

I am interested in investigating the microstructure of materials using a wide range of transmission electron microscopy (TEM) techniques, such as tomography, scanning transmission electron microscopy (STEM) and STEM with energy-dispersive X-ray spectrometry (EDX) and/or electron energy-loss spectrometry (EELS) for quantitative analysis. I also have a very good theoretical and operational knowledge of diffraction, high resolution TEM, weak-beam dark-field (WBDF) Method, conventional TEM, and energy filtered TEM (EFTEM). In addition, I have some experience of precession and holography. I received intensive training of using double aberration corrected TEM, JEOL R005 in Sheffield, I am explored the use of the spherical aberration corrected TEM TECNAI-F20, and now I am operating double aberration corrected TEM TITAN routinely. Besides, I have some experience of scanning electron microscopy (SEM), focused ion beam (FIB) techniques. Finally, I have the knowledge of various TEM specimen preparation techniques to prepare semiconductors, metals, powders and bio cell. I have used ion milling, FIB and tripod routinely to prepare samples.


Selected Publications:

[1]  M C Parri, Y Qiu and T Walther, New pathways for improved quantification of energy dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy, Journal of Microscopy, 260 (2015) 427-441.

[2]   Y Qiu, H Bender, O Richard, M-S Kim, E Van Besien, I Vos, M de Potter de ten Broeck, D Mocuta and W Vandervorst, Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon, Scientific Reports, 5 (2015) 12692.

[3]   Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, M Quillec, N Cherkashin, H Wang, S Duguay and D Blavette, Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon, Nano Lett., 14(4) (2014) 1769-1775.