JQH Research Group

  • 9

    9J.Q. He, E. Vasco, C.L. Jia, R. Dittmann and R.H. Wang, Microstructure of epitaxial Ba0.7Sr0.3TiO3 /SrRuO3 bilayer films on SrTiO3 substrates, J. Appl. Phys.,  97 (2005)104907 (PDF

  • 8

    8. A.R. Teren, R. Thomas, J.Q. He and P. Ehrhart, Comparison of precursors for pulsed organometallic CVD of HfO2 High-k dielectric thin films, Thin solid films, 478 (2005) 206 (PDF)

  • 7

    7. J.Q. He, A. Teren, C.L. Jia, P. Ehrhart, K. Urban

    , R. Waser, R.H. Wang, Microstructure of HfO2 thin films grown on Si substrates J. Crystal growth262(2004)295 (PDF)

  • 6

    6J.Q. He, C.L. Jia, J. Schubert and R.H. Wang, Microstructures of epitaxial La0.7Ca0.3MnO3 thin film grown on SrTiO3 and NdGaO3 substrates, J. Crystal growth, 265 (2004) 241 (PDF)

  • 5

    5. Xin Guo and Jiaqing He,  Hydrothermal Degradation of Cubic Zirconia, Acta Materialia51 (2003) 5123 (PDF)

  • 4

    4. R. Dittmann, R. Plonka, E. Vasco, N. A. Pertsev, J. Q. He, C. L. Jia, S. Hoffmann-Eifert and R. Waser Sharp ferroelectric phase transition in strained single-crystalline SrRuO3/Ba0.7Sr0.3TiO3 /SrRuO3 capacitors, Appl. Phys.Lett.


    83 (2003) 5011 (PDF)
  • 3

    3. A.R.Teren, P.Ehrhart, R.Waser, J.Q. He, C.L.Jia M.Schumacher, J. Linner, P.K. Baumann T.J.Leedham, S.R.Rushworth, A.C.Jones, Comparison of Hafnium Precursors for the MOCVD of HfO2 for Gate Dielectric Applications,Integrated ferroelectrics, 57 (2003)1163(PDF)

  • 2

    2Jiaqing He, Renhui Wang, Jianian Gui and Cheng Dong, Orthorhombic to Cubic Phase Transition in La1-xCaxMnO3 Perovskites, phys. stat. sol. (b), 229 (2002)1145(PDF)

  • 1

    1J.Q. He , S. Regnery, C.L. Jia, Y.L. Qin, F. Fitsilis, P. Ehrhart, R. Waser, K. Urban and R. H. Wang, Interfacial and microstructural properties of SrTiO3 thin films grown on Si(001)substrates, J. Appl. Phys., 92 (2002) 7200(PDF)

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